Differences in Si doping efficiency in tertiarybutylarsine, monoethylarsine and arsine for GaAs and AlGaAs grown by MOVPE
- 1 March 1992
- journal article
- Published by Springer Nature in Journal of Electronic Materials
- Vol. 21 (3) , 305-315
- https://doi.org/10.1007/bf02660459
Abstract
No abstract availableKeywords
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