Reaction kinetics of GeCl4 on Si(111)7 × 7
- 15 November 1992
- journal article
- Published by Elsevier in Surface Science
- Vol. 278 (3) , 383-396
- https://doi.org/10.1016/0039-6028(92)90674-u
Abstract
No abstract availableKeywords
This publication has 60 references indexed in Scilit:
- Growth processes in the initial stage of Ge films on (811)Si surfaces by GeH4 source molecular beam epitaxyJournal of Applied Physics, 1990
- Selective germanium epitaxial growth on silicon using CVD technology with ultra-pure gasesJournal of Crystal Growth, 1990
- Growth processes in the initial stages of deposition of Ge films on (100) Si surfaces by GeH4 source molecular beam epitaxyJournal of Crystal Growth, 1990
- Reconstructions and phase transitions of Ge on the Si(111)7 × 7 surface: I. Structural changesSurface Science, 1989
- Ge Atomic Layer Epitaxy by Use of Ar Ion Laser HeatingJapanese Journal of Applied Physics, 1989
- Germanium Atomic Layer Epitaxy Controlled by Surface Chemical ReactionsJournal of the Electrochemical Society, 1989
- Initial stage of heteroepitaxy of Ge on Si(111)-7 × 7 and (100)-2 × 1 surfaces studied by low-energy electron-loss spectroscopy (LEELS)Surface Science, 1988
- FT-IR Analysis of the Photolytic Laser-Induced Chemical Vapor Deposition of Germanium FilmsApplied Spectroscopy, 1986
- The influence of reconstruction on epitaxial growth: Ge on Si(100)-(2 × 1) and Si(111)-(7 × 7)Surface Science, 1985
- Low Carbon Contamination of Epitaxial Germanium Films Produced by Pyrolysis of Alkyl Germanium CompoundsJournal of the Electrochemical Society, 1975