Schottky-Drain Technology for AlGaN/GaN High-Electron Mobility Transistors
- 25 February 2010
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 31 (4) , 302-304
- https://doi.org/10.1109/led.2010.2040704
Abstract
In this letter, we demonstrate 27% improvement in the buffer breakdown voltage of AlGaN/GaN high-electron mobility transistors (HEMTs) grown on Si substrate by using a new Schottky-drain contact technology. Schottky-drain AlGaN/GaN HEMTs with a total 2-¿m-thick GaN buffer showed a three-terminal breakdown voltage of more than 700 V, while conventional AlGaN/GaN HEMTs of the same geometry showed a maximum breakdown voltage below 600 V. The improvement of the breakdown voltage has been associated with the planar contact morphology and lack of metal spikes in the Schottky-drain metallization.Keywords
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