Determination of band gap and effective masses in InAs/Ga1−xInxSb superlattices
- 13 July 1992
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 61 (2) , 207-209
- https://doi.org/10.1063/1.108219
Abstract
InAs/Ga1−xInxSb superlattices have been investigated by magneto‐optical and magnetotransport techniques. Band gaps, determined from interband magneto‐optical measurements and from the temperature dependence of the intrinsic carrier concentration, are in the long wavelength infrared region (8.3–12.4 μm) and are in good agreement with gaps calculated from a two‐band model. Both electron and hole effective masses were measured by cyclotron resonance and the electron effective mass is found to be a factor of 4–5 larger than in HgCdTe (the industry standard IR material). This is necessary for reduced dark currents and good optical absorption coefficients in this material.Keywords
This publication has 13 references indexed in Scilit:
- Far-infrared photoresponse of the InAs/GaInSb superlatticeApplied Physics Letters, 1991
- Growth of InAs/Ga1−xInxSb infrared superlatticesJournal of Crystal Growth, 1991
- Infrared optical characterization of InAs/Ga1−xInxSb superlatticesApplied Physics Letters, 1990
- Electron transport and cyclotron resonance in [211]-oriented HgTe–CdTe superlatticesJournal of Vacuum Science & Technology A, 1990
- Long-wavelength infrared detectors based on strained InAs–Ga1−xInxSb type-II superlatticesJournal of Vacuum Science & Technology A, 1989
- Band-edge properties of Hg-based superlatticesJournal of Vacuum Science & Technology A, 1989
- Theory of magnetooptical properties in quantum wells of narrow-gap semiconductorsPhysical Review B, 1988
- Proposal for strained type II superlattice infrared detectorsJournal of Applied Physics, 1987
- Interband Magneto-Absorption and Faraday Rotation in InSbPhysical Review B, 1966
- Band structure of indium antimonideJournal of Physics and Chemistry of Solids, 1957