Measurement of Silicon Epitaxial Layers Less Than 1-μ Thick by Infrared Interference
- 1 July 1970
- journal article
- conference paper
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 41 (8) , 3532-3535
- https://doi.org/10.1063/1.1659454
Abstract
An analysis of the infrared-interference method of measuring epitaxial layer thickness is given which shows that the technique is useful for measurement of layers thinner than one micron. The connection between plasma resonance and infrared interference is established. A new method of interpreting the infrared spectra is given which produces both the layer thickness and substrate impurity concentration.This publication has 9 references indexed in Scilit:
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