Deep-level admittance spectroscopy of D X centers in AlGaAs:Sn
- 15 October 1989
- journal article
- letter
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 66 (8) , 3955-3958
- https://doi.org/10.1063/1.344029
Abstract
Deep‐level admittance spectroscopy (DLAS) of DX centers in AlxGa1−xAs:Sn (0.2<xDX center in AlxGa1−xAs:Sn with x>0.35 because of the strong freeze‐out of free carriers in these samples. Even in the case of low AlAs mole fraction samples (x<0.35), the DLTS technique fails to reveal all the levels observed by DLAS and provides information only on the SN3 level.This publication has 14 references indexed in Scilit:
- Alloy broadening of the emission barrier of the D X center in aluminum gallium arsenideApplied Physics Letters, 1989
- Physical origin of the D X centerApplied Physics Letters, 1988
- Photocapacitance study of pressure-induced deep donors in GaAs: SiPhysical Review B, 1987
- Lattice relaxation of pressure-induced deep centers in GaAs:SiApplied Physics Letters, 1987
- Photoionization cross section of theDXcenter in Si-dopedAsPhysical Review B, 1987
- Observation of the Persistent Photoconductivity Due to the DX Center in GaAs under Hydrostatic PressureJapanese Journal of Applied Physics, 1985
- Trapping characteristics and a donor-complex () model for the persistent-photoconductivity trapping center in Te-dopedPhysical Review B, 1979
- Admittance spectroscopy of impurity levels in Schottky barriersJournal of Applied Physics, 1975
- Frequency dependence of C and ΔV/Δ(C−2) of Schottky barriers containing deep impuritiesSolid-State Electronics, 1973
- Admittance of p-n junctions containing trapsSolid-State Electronics, 1972