Selective-Area Epitaxy and In-Situ Etching of Gaas Using Tris- Dimethylaminoarsenic By Chemical Beam Epitaxy
- 1 January 1996
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
No abstract availableKeywords
This publication has 11 references indexed in Scilit:
- Selective-area epitaxy of carbon-doped (Al)GaAs by chemical beam epitaxyJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1995
- A study of chemical beam epitaxy of GaAs using tris-dimethylaminoarsenicJournal of Electronic Materials, 1995
- Metalorganic molecular beam epitaxy and etching of GaAs and GaSb using trisdimethylaminoarsenic and trisdimethylaminoantimonyJournal of Crystal Growth, 1994
- Chemical beam epitaxy selectively-regrown n+-GaAs layer on metalorganic chemical vapor deposition grown GaInP/GaInAs/GaAs pseudomorphic high electron mobility transistor structureJournal of Crystal Growth, 1994
- The selectively grown permeable junction base transistor with a gate of highly carbon doped GaAsJournal of Crystal Growth, 1994
- Chemical/surface mechanistic considerations in the design of novel precursors for metalorganic molecular beam epitaxyJournal of Crystal Growth, 1994
- Amino-arsine and -phosphine compounds for the MOVPE of III–V semiconductorsJournal of Crystal Growth, 1993
- Growth of GaAs and AlGaAs by metalorganic molecular beam epitaxy using tris-dimethylaminoarsenicApplied Physics Letters, 1992
- Planar AlGaAs/GaAs heterojunction bipolar transistors fabricated using selective W-CVDIEEE Electron Device Letters, 1992
- Selective growth mechanism of GaAs in metalorganic molecular beam epitaxyJournal of Crystal Growth, 1991