Hall effect measurements of hole mobility in an inversion layer of a mos structure at low temperatures
- 1 January 1972
- journal article
- Published by Elsevier in Solid State Communications
- Vol. 10 (1) , 63-69
- https://doi.org/10.1016/0038-1098(72)90349-3
Abstract
No abstract availableKeywords
This publication has 6 references indexed in Scilit:
- Hall effect measurements of hole mobility in an inversion layer at the Si-SiO2 interfacePhysica Status Solidi (a), 1971
- On the Temperature Dependence of Hole Mobility in SiliconPhysica Status Solidi (b), 1970
- The Two-Dimensional Lattice Scattering Mobility in a Semiconductor Inversion LayerJournal of the Physics Society Japan, 1969
- Properties of Semiconductor Surface Inversion Layers in the Electric Quantum LimitPhysical Review B, 1967
- EFFECT OF SURFACE SCATTERING ON ELECTRON MOBILITY IN AN INVERSION LAYER ON p-TYPE SILICONApplied Physics Letters, 1964
- Effective Carrier Mobility in Surface-Space Charge LayersPhysical Review B, 1955