Whispering gallery lasers on semi-insulating GaAs substrates
- 15 April 1980
- journal article
- conference paper
- Published by AIP Publishing in Applied Physics Letters
- Vol. 36 (8) , 629-631
- https://doi.org/10.1063/1.91631
Abstract
Double heterostructure lasers are described in which light is guided by total internal reflection along a dielectric interface formed by the perimeter of an etched mesa. By means of the crowding effect, injection current is restricted to a narrow strip adjacent to the edge of the mesa. This results in the preferential excitation of optical modes which are localized in the vicinity of the dielectric interface. Both half-ring lasers formed at a single cleaved facet and quarter-ring lasers formed at a cleaved corner were fabricated.Keywords
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