Evaluation of Deep States in Amorphous-Silicon/Silicon-Nitride System from Charge-Coupled Device Characteristics
- 1 July 1988
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 27 (7A) , L1337-1339
- https://doi.org/10.1143/jjap.27.l1337
Abstract
Charge transfer characteristics have been investigated experimentally in amorphous-silicon charge-coupled devices under wide operation conditions. Deep states are found to cause the low and frequency-independent transfer efficiency. The deep states in amorphous-silicon/silicon-nitride system have been separated into the bulk states in the amorphous-silicon layer and the interface states, for the first time. Their typical values are 7.0×1015 cm-3eV-1 and 1.2×1011 cm-2eV-1, respectively.Keywords
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