Fowler–Nordheim hole tunneling in p-SiC/SiO2 structures
- 16 October 2000
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 77 (16) , 2560-2562
- https://doi.org/10.1063/1.1318229
Abstract
We report the confirmed occurrence of Fowler–Nordheim hole tunneling in metal-oxide-semiconductor capacitor structures. The effective mass for holes in the oxide is found to be in the range of where m is the free electron mass.
Keywords
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