Inhomopeneity of Semi-Insulating GaAs Wafers with Nearly Uniform Resistivity Distribution
- 16 March 1989
- journal article
- research article
- Published by Wiley in Physica Status Solidi (a)
- Vol. 112 (1) , K35-K37
- https://doi.org/10.1002/pssa.2211120169
Abstract
No abstract availableThis publication has 6 references indexed in Scilit:
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- Contacts for Electrical Characterization of Semi-Insulating GaAsPhysica Status Solidi (a), 1986
- Two-dimensional microscopic uniformity of resistivity in semi-insulating GaAsJournal of Applied Physics, 1985
- Leakage Current IL Variation Correlated with Dislocation Density in Undoped, Semi-Insulating LEC-GaAsJapanese Journal of Applied Physics, 1982
- Inhomogeneity in Semi-Insulating GaAs Revealed by Scanning Leakage Current MeasurementsJapanese Journal of Applied Physics, 1982
- Dislocation density and sheet resistance variations across semi-insulating GaAs wafersIEEE Transactions on Electron Devices, 1982