The influence of the substrate on proximity effect and exposure dose for the inorganic resist LiF(AlF3)
- 4 February 1995
- journal article
- Published by Elsevier in Microelectronic Engineering
- Vol. 27 (1-4) , 199-202
- https://doi.org/10.1016/0167-9317(94)00089-d
Abstract
No abstract availableKeywords
This publication has 4 references indexed in Scilit:
- The resolution of the inorganic electron beam resist LiF(AlF3)Microelectronic Engineering, 1994
- Fabrication of Metallic Structures in the 10 nm Region Using an Inorganic Electron Beam ResistJapanese Journal of Applied Physics, 1993
- Nanostructure fabrication using lithium fluoride films as an electron beam resistJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1992
- Radiolysis and resolution limits of inorganic halide resistsJournal of Vacuum Science & Technology B, 1985