Noise spectroscopy of local levels in semiconductors

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Abstract
A method for extracting the parameters of local levels from noise spectroscopic data for the case when the capture cross section of electrons sigma n depends on temperature exponentially, sigma n= sigma 0 exp(-E1/kT), has been suggested. For the limiting cases when the Fermi level EF lies significantly below (EF-E0>>kT) or above (E0-EF>>kT) the level E0, analytic expressions have been obtained to calculate sigma 0, E0, E1 and the level concentration Nt. The results have been applied to noise-measurement data for GaAs samples with electron concentrations n0 approximately 1015, 1016 and 1017 cm-3. It has been shown that the technique proposed can be applied to a wide variety of experimental situations.