A computerized study of the class-C-biased RF-power amplifier
- 1 April 1978
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Journal of Solid-State Circuits
- Vol. 13 (2) , 247-258
- https://doi.org/10.1109/JSSC.1978.1051027
Abstract
Comparisons between experiments and simulations on a widely used output stage in mobile transmitters are made. It is demonstrated that the operation cycle in this type of circuit differs from the one commonly assumed. The reason is that base widening dominates the feedback effect of the transistor.Keywords
This publication has 10 references indexed in Scilit:
- Instabilities in RF-power amplifiers caused by a self-oscillation in the transistor bias networkIEEE Journal of Solid-State Circuits, 1976
- A unified approach to the base widening mechanisms in bipolar transistorsSolid-State Electronics, 1975
- Class E-A new class of high-efficiency tuned single-ended switching power amplifiersIEEE Journal of Solid-State Circuits, 1975
- Voltage-dependent reverse current in high resistivity silicon surface-barrier diodesNuclear Instruments and Methods, 1974
- The calculation of the avalanche multiplication factor in silicon p—N junctions taking into account the carrier generation (thermal or optical) in the space-charge regionIEEE Transactions on Electron Devices, 1973
- Steady-state analysis of nonlinear circuits with periodic inputsProceedings of the IEEE, 1972
- Large-signal nonlinear analysis of a high-power high-frequency junction transistorIEEE Transactions on Electron Devices, 1970
- High injection in epitaxial transistorsIEEE Transactions on Electron Devices, 1969
- Low to high injections in double-diffused transistorsIEEE Transactions on Electron Devices, 1968
- A theory of transistor cutoff frequency (fT) falloff at high current densitiesIRE Transactions on Electron Devices, 1962