Anomalous Diffusion of Hydrogen and the Dependence of the Diffusion Constants on Hydrogen Content in Hydrogenated Amorphous Silicon
- 1 January 1992
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
No abstract availableKeywords
This publication has 17 references indexed in Scilit:
- Hydrogen dynamics in a-Si:H: Multiple trapping, structural relaxation, and the Meyer-Neldel relationPhysical Review B, 1991
- Annealing-temperature influence on the dispersive diffusion of hydrogen in undopeda-Si:HPhysical Review B, 1990
- Evidence for structural relaxation in measurements of hydrogen diffusion in rf-sputtered boron-dopeda-Si:HPhysical Review B, 1990
- Dispersive diffusion of hydrogen ina-Si:H: Influence of the film deposition temperaturePhysical Review B, 1990
- Nature of long-range atomic H motion ina-Si:HPhysical Review Letters, 1989
- Calorimetric evidence for structural relaxation in amorphous siliconPhysical Review Letters, 1989
- Connection between the Meyer-Neldel relation and multiple-trapping transportPhysical Review B, 1988
- Stretched-exponential relaxation arising from dispersive diffusion of hydrogen in amorphous siliconPhysical Review Letters, 1987
- Defects in Amorphous Silicon: A New PerspectivePhysical Review Letters, 1986
- A SIMS analysis of deuterium diffusion in hydrogenated amorphous siliconApplied Physics Letters, 1978