Quantum size effects in GaAs/GaAsxP1−x strained-layer superlattices
- 1 October 1984
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 45 (7) , 749-751
- https://doi.org/10.1063/1.95385
Abstract
We report the first observations of quantum size effects in GaAs/GaAs0.5P0.5 strained‐layer superlattices (SLS’s). Using excitation and photoluminescence spectroscopies, we have observed optical transitions between excited states of the electron and hole quantum wells. These observations provide a measure of the biaxial compressive strain in the GaAs layers, interfacial roughness, and valence‐band offset for the GaAs/GaP heterojunction.Keywords
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