High-quality and low-temperature epitaxial Si films deposited at very high deposition rate
- 31 May 2001
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 225 (2-4) , 335-339
- https://doi.org/10.1016/s0022-0248(01)00906-x
Abstract
No abstract availableKeywords
This publication has 13 references indexed in Scilit:
- Electronic properties of silicon epitaxial layers deposited by ion-assisted deposition at low temperaturesJournal of Applied Physics, 2000
- Low-Temperature Processing of Crystalline Si Films on Glass for Electronic ApplicationsPublished by Springer Nature ,2000
- Ion-Assisted Deposition of Silicon Epitaxial Films with High Deposition Rate Using Low Energy Silicon IonsMRS Proceedings, 2000
- Growth of epitaxial silicon at low temperatures using hot-wire chemical vapor depositionApplied Physics Letters, 1999
- RHEED investigation of limiting thickness epitaxy during low-temperature Si-MBE on (100) surfaceThin Solid Films, 1998
- Nucleation and Growth of Crystalline Silicon Films on Glass for Solar CellsPhysica Status Solidi (a), 1998
- Quantum efficiency analysis of thin-layer silicon solar cells with back surface fields and optical confinementIEEE Transactions on Electron Devices, 1996
- Material-Related Growth Characteristics in MBEPublished by Springer Nature ,1996
- Semiconductor molecular-beam epitaxy at low temperaturesJournal of Applied Physics, 1995
- Dislocation Etch for (100) Planes in SiliconJournal of the Electrochemical Society, 1972