Real-time, i n s i t u monitoring of GaAs and AlGaAs photoluminescence during plasma processing
- 26 February 1990
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 56 (9) , 821-823
- https://doi.org/10.1063/1.102673
Abstract
Monitoring wafer changes in situ during plasma treatment provides real‐time feedback for developing and controlling device processing. In this letter we report the use of photoluminescence spectroscopy to monitor epitaxial films of Al0.3Ga0.7As and semi‐insulating GaAs substrates during BCl3 plasma etching and H2 plasma passivation. Photoluminescence monitoring is used for etching endpoint detection, surface damage quantification, and wafer temperature measurement.Keywords
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