Magnetocapacitance measurements in GaAs heterostructures
- 1 April 1986
- journal article
- Published by Elsevier in Surface Science
- Vol. 170 (1-2) , 304-310
- https://doi.org/10.1016/0039-6028(86)90979-9
Abstract
No abstract availableThis publication has 12 references indexed in Scilit:
- Capacitance measurements of a quantized two-dimensional electron gas in the regime of the quantum Hall effectPhysical Review B, 1985
- Specific Heat of Two-Dimensional Electrons in GaAs-GaAlAs MultilayersPhysical Review Letters, 1985
- Use of capacitance techniques in the study of two-dimensional layers in silicon mosfetsSurface Science, 1984
- The complex capacitance of Si inversion layers in the quantized resistance regimeSurface Science, 1984
- Magnetization measurements on a two-dimensional electron systemSurface Science, 1984
- The complex capacitance of silicon inversion layers in strong inversion as a function of frequency and resistanceSolid State Communications, 1984
- Parabolic Magnetoresistance from the Interaction Effect in a Two-Dimensional Electron GasPhysical Review Letters, 1983
- Admittance studies of surface quantization in [100]-oriented Si metal-oxide-semiconductor field-effect transistorsPhysical Review B, 1974
- Acquired Type 3 HyperlipoproteinemiaArchives of internal medicine (1960), 1972
- Capacitance Observations of Landau Levels in Surface QuantizationPhysical Review Letters, 1968