Electronic structure of imperfect Si/Ge heterostructures
- 15 December 1996
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 54 (23) , 16781-16785
- https://doi.org/10.1103/physrevb.54.16781
Abstract
Local-density ab initio pseudopotential calculations have been carried out to study the electronic structure of imperfect Si/Ge superlattices. The interaction between the interfaces and substitutional defects results in interface-related localized resonances, and causes local perturbations in other states of the heterostructures. In particular, the antimony impurity shows a high degree of coupling to the superlattice. Analogous localization also occurs at germanium atoms replacing host atoms in the silicon layers. © 1996 The American Physical Society.Keywords
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