Luminescence from monolayer-thick Ge quantum wells embedded in Si
- 15 January 1995
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 51 (3) , 2001-2004
- https://doi.org/10.1103/physrevb.51.2001
Abstract
We report on the observation of strong electroluminescence and photoluminescence from a Si/Ge quantum structure involving a two-monolayer-thick Ge layer in a bulk Si matrix. It has been proposed that when a conduction-band electron is scattered at the Si-Ge interface, the normally forbidden no-phonon (NP) interband transition is allowed due to mixing of different bulk momenta. The luminescence spectra of our samples consist of a NP line and a transverse-optical (TO) phonon replica originating from the Ge layers. The TO-phonon energy coincides with a Si-Ge mode, confirming the importance of the interface.Keywords
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