Raman spectroscopy studies of progressively annealed amorphous Si/Ge superlattices
- 15 September 1991
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 70 (6) , 3088-3092
- https://doi.org/10.1063/1.349287
Abstract
The thermal stability of a-Si/a-Ge superlattices with periods ranging from 2.5 to 41.2 nm has been studied using Raman spectroscopy. Atomic relaxation and rearrangement at the Si/Ge interfaces occur up to an anneal temperature of 300 °C. Further annealing of the superlattices reveals enhanced diffusion and a retarded crystallization, and these effects are more pronounced in short period superlattices.This publication has 26 references indexed in Scilit:
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