On the growth mechanism of Li- and Na-doped Zn chalcogenides on GaAs(001) by means of molecular beam epitaxy
- 2 February 1996
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 159 (1-4) , 376-379
- https://doi.org/10.1016/0022-0248(95)00794-6
Abstract
No abstract availableKeywords
This publication has 4 references indexed in Scilit:
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- Auto-doping of Ga in ZnSe/GaAs layers grown at low temperatures by post-heated molecular beam epitaxyJournal of Crystal Growth, 1994
- Molecular Beam Epitaxially Grown ZnSe(001) Surface Studied by the In Situ Observation of RHEED IntensityJapanese Journal of Applied Physics, 1991
- Analysis of reflection high-energy electron-diffraction data from reconstructed semiconductor surfacesPhysical Review B, 1984