Photoluminescence studies of LPE AlxGa1-xSb
- 1 May 1987
- journal article
- letter
- Published by IOP Publishing in Semiconductor Science and Technology
- Vol. 2 (5) , 318-320
- https://doi.org/10.1088/0268-1242/2/5/014
Abstract
Photoluminescence spectra have been investigated for LPE-grown AlxGa1-xSb at 77 K, and five emission peaks observed. These emissions have been interpreted by taking into account one shallow acceptor level and two native defect levels in the energy band diagram. The shallow acceptor level is located at about 30 meV above the valence band, which may be due to the complex defect VGaGaSb. The native defects introduce two levels, which are about 90 meV below the Gamma 1 minimum and about 160 meV below the L1 minimum. The defect levels may be related to complex defects of the Sb vacancy.Keywords
This publication has 13 references indexed in Scilit:
- Liquid-phase-epitaxial growth of Ga0.96Al0.04Sb: Electrical and photoelectrical characterizationsJournal of Applied Physics, 1986
- Calculation of the Ga-Al-Sb phase diagram using the Redlich-Kister expressionPhysica Status Solidi (a), 1985
- An improved LPE apparatus for the growth of GaSb and GaAlSb epitaxial layers for infrared photodiodesJournal of Crystal Growth, 1984
- Modulation-spectroscopy study of theband structurePhysical Review B, 1983
- Electrical and Photoelectrical Characterization of n·GaxAl1-xSb–p·GaSb HeterojunctionJapanese Journal of Applied Physics, 1982
- Vapor Growth of Te-Doped GaxAl1-xSb on GaSbJapanese Journal of Applied Physics, 1981
- Resonant enhancement of impact in Ga1−xAlxSbApplied Physics Letters, 1980
- O.M. v.p.e. growth of AlGaSb and AlGaAsSbElectronics Letters, 1980
- The Al‐Ga‐Sb Ternary Phase Diagram and Its Application to Liquid Phase Epitaxial GrowthJournal of the Electrochemical Society, 1977
- Study of the long-wavelength optic phonons inPhysical Review B, 1975