Interfacial reactions in dynamically heated Si/Me/Si sandwich layers
- 1 December 1994
- journal article
- Published by Elsevier in Thin Solid Films
- Vol. 253 (1-2) , 293-298
- https://doi.org/10.1016/0040-6090(94)90336-0
Abstract
No abstract availableThis publication has 29 references indexed in Scilit:
- Thin film compound phase formation sequence: An effective heat of formation modelMaterials Science Reports, 1993
- Use of the effective heat of formation rule for predicting phase formation sequence in AlNi systemsMaterials Letters, 1990
- Metallurgical aspects of the formation of silicidesThin Solid Films, 1986
- Kinetics of formation of silicides: A reviewJournal of Materials Research, 1986
- Growth kinetics of NiSi on (100) and (111) siliconJournal of Physics D: Applied Physics, 1984
- Impurity effects in molybdenum silicide formationThin Solid Films, 1982
- The oxygen effect in the growth kinetics of platinum silicidesJournal of Applied Physics, 1981
- Gold-aluminum thin-film interactions and compound formationJournal of Applied Physics, 1981
- Influence of the nature of the Si substrate on nickel silicide formed from thin Ni filmsThin Solid Films, 1976
- Structure and growth kinetics of Ni2Si on siliconThin Solid Films, 1975