Intersubband relaxation of hot excitons in GaAs quantum wells
- 1 May 1994
- journal article
- Published by IOP Publishing in Semiconductor Science and Technology
- Vol. 9 (5S) , 733-735
- https://doi.org/10.1088/0268-1242/9/5s/090
Abstract
We have experimentally studied the time evolution of the exciton population in a higher subband of GaAs quantum wells, below the free-carrier continuum. The lifetime of the exciton formed by an electron of the lowest subband and a heavy hole of the second subband in GaAs quantum wells is determined by time-resolved luminescence as 130+or-20 ps. This result is consistent with theoretical estimations of intersubband scattering by acoustic phonon emission. We discuss subband transitions of excitons in quantum wells as a new appealing concept for optically pumped coherent sources in the meV range.Keywords
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