Effects of the Fermi Level on Defects in Be+-Implanted GaAs Studied by a Monoenergetic Positron Beam
- 1 December 1991
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 30 (12A) , L2002
- https://doi.org/10.1143/jjap.30.l2002
Abstract
Vacancy-type defects in 60-keV Be+-implanted GaAs(100) were studied by a monoenergetic positron beam. The depth distribution of vacancy-type defects in an n-type specimen (Si, 1×1016 Si/cm3) was obtained from measurements of Doppler broadening profiles of the positron annihilation as a function of incident positron energy. The dominant defect species was identified as a divacancy from the characteristic value of the line-shape parameter S. These defects, however, could not be observed in the p-type specimen (Zn, 3×1018 Zn/cm3). This fact can be attributed to the recombination of vacancy-type defects and interstitial Ga atoms introduced by the Fermi level effect.Keywords
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