Two-dimensional finite element charge-sheet model of a short-channel MOS transistor

This publication has 9 references indexed in Scilit:

• Numerical investigation of mesh size convergence rate of the finite element method in MESFET simulation
  Solid-State Electronics, 1981
• MINIMOS—A two-dimensional MOS transistor analyzer
  IEEE Transactions on Electron Devices, 1980
• Nonplanar VLSI device analysis using the solution of Poisson's equation
  IEEE Transactions on Electron Devices, 1980
• Scanning electron microscope measurements on short channel MOS transistors
  Solid-State Electronics, 1980
• Two-Dimensional Concentration Dependent Diffusion
  Bell System Technical Journal, 1980
• Generalized guide for MOSFET miniaturization
  IEEE Electron Device Letters, 1980
• A charge-sheet model of the MOSFET
  Solid-State Electronics, 1978
• Multi-level adaptive solutions to boundary-value problems
  Mathematics of Computation, 1977
• Threshold voltage from numerical solution of the two-dimensional MOS transistor
  IEEE Transactions on Circuit Theory, 1973