Band offsets for pseudomorphic InP/GaAs
- 16 January 1989
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 54 (3) , 259-261
- https://doi.org/10.1063/1.100983
Abstract
Recently determined band-edge hydrostatic deformation potentials are used to predict heterojunction band offsets for the pseudomorphic GaAs-InP system. The calculations include GaAs/InP, InP/GaAs, and strained-layer GaAs-InP superlattices for both [100] and [111] oriented epitaxial growth. The offsets are type II for the unstrained case. The large hydrostatic contributions to the stress-induced band offsets can convert the offsets to type I. This conversion is especially apparent for growth in the [111] direction because of the small Poisson ratio for biaxial stress in the (111) plane.Keywords
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