Two-dimensional electron and hole states at the staggered band line-up interface of InAlAs/InP

Publisher Website
Google Scholar
Abstract
Crystallographic and electronic properties of the staggered band line‐up InAlAs/InP interface grown by metal‐organic chemical‐vapor deposition are studied using double crystal x‐ray diffraction, Shubnikov‐de‐Haas (SdH), capacitance‐voltage, and calorimetric absorption experiments. Observation of a large number of Pendellösung oscillations in the x‐ray rocking curves, which can be perfectly modeled using dynamical diffraction theory, demonstrate the high crystallographic quality of the interfaces. A two‐dimensional electron gas (2DEG) with ns∼6×1011 cm−2 is formed at the InP side of the interface by carrier transfer from the unintentionally doped InAlAs. The electronic structure of the interface is derived from self‐consistent band structure calculation including many particle corrections and good agreements are found with experimentally observed subband transitions up to n=4.