Resonant electron tunneling in ZnSe/BeTe double-barrier, single-quantum-well heterostructures
- 1 December 1996
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 80 (11) , 6329-6332
- https://doi.org/10.1063/1.363711
Abstract
We report on resonant tunneling through ZnSe/BeTe double-barrier, single-quantum-well structures. Negative differential resistance has been observed in the current–voltage characteristics up to room temperature. Due to a conduction-band offset of more than 2 eV, four resonances with negative differential resistance could be detected for this semiconductor material combination at liquid-helium temperature. The structures exhibit a peak-to-valley ratio up to 6:1 at 4.2 K. Current–voltage characteristics as a function of temperature have been studied and analyzed.This publication has 12 references indexed in Scilit:
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