Fabrication of Polycrystalline Silicon on Glass from Fluorinated Precursors with the Aid of Atomic Hydrogen
- 1 January 1995
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
No abstract availableKeywords
This publication has 10 references indexed in Scilit:
- Roles of Atomic Hydrogen in Chemical AnnealingJapanese Journal of Applied Physics, 1995
- Carrier transport in polycrystalline silicon films deposited by a layer-by-layer techniqueJournal of Applied Physics, 1994
- Polycrystalline silicon thin films processed with silicon ion implantation and subsequent solid-phase crystallization: Theory, experiments, and thin-film transistor applicationsJournal of Applied Physics, 1994
- Preparation of High-Quality Microcrystalline Silicon from Fluorinated Precursors by a Layer-by-Layer TechniqueJapanese Journal of Applied Physics, 1993
- In-Situ Chemically Cleaning Poly-Si Growth at Low TemperatureJapanese Journal of Applied Physics, 1992
- Poly-Si Thin Film Transistors Fabricated with Rapid Thermal Annealed Silicon FilmsJapanese Journal of Applied Physics, 1991
- Control of nucleation and growth in the preparation of crystals by plasma-enhanced chemical vapour depositionPhilosophical Magazine Part B, 1991
- Preparation of High-Quality n-Type Poly-Si Films by the Solid Phase Crystallization (SPC) MethodJapanese Journal of Applied Physics, 1990
- High-performance TFTs fabricated by XeCl excimer laser annealing of hydrogenated amorphous-silicon filmIEEE Transactions on Electron Devices, 1989
- PLASMA DEPOSITION OF AMORPHOUS AND CRYSTALLINE SILICON: THE EFFECT OF HYDROGEN ON THE GROWTH, STRUCTURE AND ELECTRONIC PROPERTIESPublished by World Scientific Pub Co Pte Ltd ,1989