In situ Annealing of GaInNAs up to 600°C
- 1 January 2001
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 40 (1R)
- https://doi.org/10.1143/jjap.40.108
Abstract
We have found that the optimum annealing temperature for GaInNAs depends on the crystallinity of the as-grown crystal, and that GaInNAs with superior crystallinity grown by solid-source molecular beam epitaxy can survive at 600°C during a considerably long annealing process.Keywords
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