Quality Improvement of GaInNAs/GaAs Quantum Well Growth by Metalorganic Chemical Vapor Deposition Using Tertiarybutylarsine
- 1 February 1999
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 38 (2S) , 1012-1014
- https://doi.org/10.1143/jjap.38.1012
Abstract
A highly strained GaInNAs/GaAs quantum well (QW) was investigated by low-pressure metalorganic chemical vapor deposition (LP-MOCVD) using tertiarybutylarsine (TBAs) and dimethylhydrazine. The V/III ratio was found to be an important parameter especially for highly strained QW growth using TBAs based on MOCVD. The optimum V/III ratio window of GaInNAs/GaAs QW growth was very narrow and located at different temperatures and In contents. We propose a postgrowth annealing procedure for improving the quality of GaInNAs/GaAs QW. The photoluminescence intensity was significantly improved after annealing at 640°C.Keywords
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