Wet-chemical passivation of Si(111)- and Si(100)-substrates
- 1 April 2000
- journal article
- Published by Elsevier in Materials Science and Engineering: B
- Vol. 73 (1-3) , 178-183
- https://doi.org/10.1016/s0921-5107(99)00457-2
Abstract
No abstract availableThis publication has 16 references indexed in Scilit:
- Trends in Wafer Cleaning TechnologyPublished by Springer Nature ,1998
- Evolution of electronically active defects during the formation of interface monitored by combined surface photovoltage and spectroscopic ellipsometry measurementsMicroelectronic Engineering, 1997
- Preparation of H-terminated Si surfaces and their characterisation by measuring the surface state densityApplied Surface Science, 1996
- Hydrogen termination of the NH4F-treated Si(111) surface studied by photoemission and surface infrared spectroscopyJournal of Applied Physics, 1992
- Characterization of HF-Treated Si Surfaces by Photoluminescence SpectroscopyJapanese Journal of Applied Physics, 1992
- Ideal hydrogen termination of the Si (111) surfaceApplied Physics Letters, 1990
- Effects of surface hydrogen on the air oxidation at room temperature of HF-treated Si (100) surfacesApplied Physics Letters, 1990
- Infrared spectroscopy of Si(111) and Si(100) surfaces after HF treatment: Hydrogen termination and surface morphologyJournal of Vacuum Science & Technology A, 1989
- Investigations on hydrophilic and hydrophobic silicon (100) wafer surfaces by X-ray photoelectron and high-resolution electron energy loss-spectroscopyApplied Physics A, 1986
- Method for reduction of hysteresis effects in MIS measurementsSolid-State Electronics, 1984