The effect of background doping and dose on diffusion of ion-implanted tin in gallium arsenide
- 1 April 1990
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 67 (7) , 3311-3314
- https://doi.org/10.1063/1.345366
Abstract
The diffusion of ion-implanted tin in gallium arsenide has been investigated as a function of implant dose and background doping. Secondary ion mass spectroscopy and electrochemical etch profiling were used to obtain chemical and carrier profiles. Based on the shapes of the concentration profiles and the background doping dependence, we have concluded that tin diffusivity is dependent on the electron concentration. This implies that Sn diffuses via negatively charged gallium vacancies. Tin diffusivity outside the implanted region is independent of dose, with an activation energy of 1.98 eV.This publication has 19 references indexed in Scilit:
- SUPREM 3.5-process modeling of GaAs integrated circuit technologyIEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, 1989
- Fabrication and characteristics of tin-doped n-layers into gallium arsenide by an open-tube diffusion processSolid-State Electronics, 1987
- Influence of boron on tin induced interdiffusion in GaAs-Ga0.72Al0.28As superlatticesApplied Physics Letters, 1987
- Planar Diffusion in Gallium Arsenide from Tin‐Doped OxidesJournal of the Electrochemical Society, 1979
- The system Ga–As–Sn: Incorporation of Sn into GaAsJournal of Applied Physics, 1973
- Diffusion of Tin into GaAs from Doped SiO[sub 2] Film SourcesJournal of the Electrochemical Society, 1971
- Tin and zinc diffusion into gallium arsenide from doped silicon dioxide layersSolid-State Electronics, 1966
- The diffusion of tin and selenium in gallium arsenideSolid-State Electronics, 1963
- The effect of arsenic pressure on impurity diffusion in gallium arsenideJournal of Physics and Chemistry of Solids, 1961
- Diffusion of Tin in Gallium ArsenideJournal of Applied Physics, 1961