SiGe BiCMOS technologies for power amplifier applications
- 1 January 2003
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
Abstract
Silicon-germanium (SiGe) BiCMOS technology has advanced in many areas. In this paper, we discuss and illustrate the key device design issues for SiGe BiCMOS HBTs suitable for wireless power amplifier applications. The experimental results for high-breakdown SiGe HBTs built in several generations of BiCMOS technology are presented with focus on the 0.5 /spl mu/m SiGe BiCMOS node. Implications of recent high-performance SiGe HBT scaling achievements for BiCMOS technologies targeting wireless power amplifier applications are considered.Keywords
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