Photoluminescence of ultrasmall Ge quantum dots grown by molecular-beam epitaxy at low temperatures
- 14 February 2002
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 80 (7) , 1279-1281
- https://doi.org/10.1063/1.1430508
Abstract
Low-temperature epitaxial growth of Si–Ge heterostructures opens possibilities for synthesizing very small and abrupt low-dimensional structures due to the low adatom surface mobilities. We present photoluminescence from Ge quantum structures grown by molecular-beam epitaxy at low temperatures which reveals a transition from two-dimensional to three-dimensional growth. Phononless radiative recombination is observed from 〈105〉 faceted Ge quantum dots with height of approximately 0.9 nm and lateral width of 9 nm. Postgrowth annealing reveals a systematic blueshift of the Ge quantum dot’s luminescence and a reduction in nonradiative recombination channels. With increasing annealing temperatures Si–Ge intermixing smears out the three-dimensional carrier localization around the dot.Keywords
This publication has 19 references indexed in Scilit:
- Effect of overgrowth temperature on the photoluminescence of Ge/Si islandsApplied Physics Letters, 2000
- RHEED studies of nucleation of Ge islands on Si(001) and optical properties of ultra-small Ge quantum dotsThin Solid Films, 2000
- Drastic modification of the growth mode of Ge quantum dots on Si by using boron adlayerThin Solid Films, 2000
- C-induced Ge dots: enhanced light-output from Si-based nanostructuresJournal of Luminescence, 1998
- Influence of pre-grown carbon on the formation of germanium dotsThin Solid Films, 1998
- Formation of carbon-induced germanium dotsApplied Physics Letters, 1997
- Photoluminescence study of the crossover from two-dimensional to three-dimensional growth for Ge on Si(100)Applied Physics Letters, 1995
- Luminescence study on interdiffusion in strained Si1−xGex/Si single quantum wells grown by molecular beam epitaxyApplied Physics Letters, 1993
- Morphological instability in epitaxially strained dislocation-free solid films: Linear stability theoryJournal of Applied Physics, 1993
- Kinetic pathway in Stranski-Krastanov growth of Ge on Si(001)Physical Review Letters, 1990