Correlation between 1/f noise and interface state density at the Fermi level in field-effect transistors
- 15 May 1985
- journal article
- letter
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 57 (10) , 4811-4813
- https://doi.org/10.1063/1.335297
Abstract
New evidence is given for the validity of the number fluctuation model in explaining the 1/f noise behavior of field‐effect transistors and for the direct proportionality between the oxide trap density and the interface state density at the Fermi level. This evidence is obtained from the determination of the energy distribution of the interface states in small size metal‐nitride‐oxide‐silicon transistors by the modified charge pumping technique.This publication has 8 references indexed in Scilit:
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