Crystallite coalescence: A mechanism for intrinsic tensile stresses in thin films
- 1 August 1999
- journal article
- Published by Springer Nature in Journal of Materials Research
- Vol. 14 (8) , 3467-3473
- https://doi.org/10.1557/jmr.1999.0468
Abstract
We examined the stress associated with crystallite coalescence during the initial stages of growth in thin polycrystalline films with island growth morphology. As growing crystallites contacted each other at their bases, the side-walls zipped together until a balance was reached between the energy associated with eliminating surface area, creating a grain boundary and straining the film. Our estimate for the resulting strain depends only on interfacial free energies, elastic properties, and grain size and predicts large tensile stresses in agreement with experimental results. We also discuss possible stress relaxation mechanisms that can occur during film growth subsequent to the coalescence event.Keywords
This publication has 24 references indexed in Scilit:
- The intrinsic stress of polycrystalline and epitaxial thin metal filmsJournal of Physics: Condensed Matter, 1994
- Intrinsic stress in sputter-deposited thin filmsCritical Reviews in Solid State and Materials Sciences, 1992
- Internal stress of vapour-deposited aluminium films: Effect of O2 and water vapour present during film depositionThin Solid Films, 1990
- Measurements of the intrinsic stress in thin metal filmsVacuum, 1990
- Stresses and deformation processes in thin films on substratesCritical Reviews in Solid State and Materials Sciences, 1988
- Stress distributions and thin film mechanical propertiesSurface and Interface Analysis, 1981
- Stresses in thin films: The relevance of grain boundaries and impuritiesThin Solid Films, 1976
- The origins of stress in thin nickel filmsThin Solid Films, 1972
- Structure and Intrinsic Stress of Platinum FilmsJournal of Vacuum Science and Technology, 1971
- Stress Anisotropy in Evaporated Iron FilmsJournal of Applied Physics, 1959