The intrinsic stress of polycrystalline and epitaxial thin metal films

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Abstract
It is well known that thin films develop large intrinsic stress during their preparation. The intrinsic stress either originates from strained regions within the films (grain boundaries, dislocations, voids, impurities, etc.) or at the film/substrate (lattice mismatch, different thermal expansion, etc) and film/vacuum interfaces (surface stress, adsorption, etc.) or is due to dynamic processes (recrystallization, interdiffusion, etc). Since the magnitude of most of these stress contributions is directly related to film morphology, important structural information can be extracted from measurements of the intrinsic stress. This article presents a thorough discussion of today's understanding of the growth of thin films and reviews the related atomistic mechanisms responsible for intrinsic stress. On the basis of these ideas recent experimental results on the intrinsic stress of UHV deposited polycrystalline and epitaxial thin metal films are discussed. Depending on the respective growth mode of the films-Volmer-Weber, Stranski-Krastanov and Frank-Van der Merwe modes-characteristic stress behaviours are observed. In situ intrinsic stress measurements are therefore a promising new technique to gain additional insight into film growth.