Reflection high energy electron diffraction and scanning tunnelling microscopy study of single-domain growth during silicon molecular beam epitaxy on Si(001)
- 30 December 1989
- journal article
- Published by Elsevier in Thin Solid Films
- Vol. 183 (1-2) , 263-271
- https://doi.org/10.1016/0040-6090(89)90451-3
Abstract
No abstract availableKeywords
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