Disorder‐induced broadening for free direct excitons in II–VI and III–V semiconducting mixed crystals

Publisher Website

1 September 1981

journal article
research article
Published by Wiley in Physica Status Solidi (b)

Vol. 107 (1) , 283-288
https://doi.org/10.1002/pssb.2221070129

Abstract

No abstract available

Keywords

This publication has 16 references indexed in Scilit:

Single‐Site Theory of Wannier Excitons in Disordered Semiconductors 11. Numerical Results
Physica Status Solidi (b), 1980
Disorder effects on free excitons in CdS_1−xSe_x mixed crystals
Physica Status Solidi (b), 1979
Single‐site theory of Wannier excitons in disordered semiconductors. I. General considerations
Physica Status Solidi (b), 1979
On the quantitative characterization of chemical disorder of In1−xGaxP from wavelength-modulated No-phonon absorption
Physica Status Solidi (b), 1978
On the no-phonon structure in mixed crystals with indirect band structure
Physica Status Solidi (b), 1978
Free-exciton transitions in the optical absorption spectra of $Ga {As}_{1 - x} P_{x}$
Physical Review B, 1976
Electroreflectance and Wavelength Modulation Study of the Direct and Indirect Fundamental Transition Region of In_1−xGa_xP
Physica Status Solidi (b), 1976
Excitons in semiconducting alloys
Physical Review B, 1974
Graphical Technique Applied to the Calculation of Excitonic Processes
Physica Status Solidi (b), 1974
No‐phonon and phonon‐assisted exciton absorption in GaAs_{1 − x}, P_x with indirect energy gap
Physica Status Solidi (b), 1972