GaAs monolithic integrated optical preamplifier
- 1 March 1987
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in Journal of Lightwave Technology
- Vol. 5 (3) , 355-366
- https://doi.org/10.1109/jlt.1987.1075520
Abstract
A GaAs monolithic integrated optical preamplifier has been developed based on the transimpedance principle. By associating the amplifier with an external p-i-n diode, a sensitivity of -38 dBm was measured at 140 Mbits/s and 10-9error rate with a signal wavelength of 1.3 μm. A TiWSiN-integrated technology was used to realize larger than 100-kω feedback resistors and gate leakage could be minimized by improving Schottky contact deposition and employing selective implantation. The optimization details of the FET and resistor elements, as well as the design techniques for integrated transimpedance amplifiers are presented.Keywords
This publication has 13 references indexed in Scilit:
- Monolithic integration of a metal—semiconductor—metal photodiode and a GaAs preamplifierIEEE Electron Device Letters, 1984
- Fine line NMOS transresistance amplifiersPublished by Institute of Electrical and Electronics Engineers (IEEE) ,1984
- Planar monolithic integration of a photodiode and a GaAs preamplifierApplied Physics Letters, 1983
- Low frequency noise physical analysis for the improvement of the spectral purity of GaAs FETs oscillatorsSolid-State Electronics, 1982
- Carrier injection and backgating effect in GaAs MESFET'sIEEE Electron Device Letters, 1982
- Noise Caused by GaAs MESFETs in Optical ReceiversBell System Technical Journal, 1981
- Monolithic GaAs direct-coupled amplifiersIEEE Transactions on Electron Devices, 1981
- GaAs f.e.t. transimpedance front-end design for a wideband optical receiverElectronics Letters, 1979
- Noise behavior of Schottky barrier gate field-effect transistors at microwave frequenciesIEEE Transactions on Electron Devices, 1971
- Depletion-Layer Photoeffects in SemiconductorsPhysical Review B, 1959