Thickness of GaP liquid phase epitaxial layers grown by step-cooling, equilibrium-cooling, and ramp-cooling methods
- 1 April 1983
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 54 (4) , 1865-1867
- https://doi.org/10.1063/1.332238
Abstract
No abstract availableThis publication has 7 references indexed in Scilit:
- A high temperature GaP MESFETIEEE Electron Device Letters, 1982
- Thickness and surface morphology of GaAs LPE layers grown by supercooling, step-cooling, equilibrium-cooling, and two-phase solution techniquesJournal of Crystal Growth, 1974
- Thickness and surface morphology of GaAs LPE layers grown by supercooling, step-cooling, equilibrium-cooling, and two-phase solution techniquesJournal of Crystal Growth, 1974
- Diffusion of Phosphorus in Gallium MeltJournal of the Electrochemical Society, 1974
- Isothermal diffusion theory of LPE: GaAs, GaP, bubble garnetJournal of Crystal Growth, 1973
- Solubility of III–V Compound Semiconductors in Column III LiquidsJournal of the Electrochemical Society, 1963
- Measurement of the Depth of Diffused Layers in Silicon by the Grooving MethodJournal of the Electrochemical Society, 1962