Photoacoustic spectroscopy use in the analysis of ion-implanted CuInSe2 single crystals

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Abstract
A high‐resolution near‐infrared photoacoustic spectrometer of the gas–microphone type is used for room‐temperature analysis of the defect states in ion‐implanted CuInSe2 single crystals. A wide range of ions differing in their masses as well as in their electrical activities in the host crystal (O+, Ne+, Cu+, Xe+, and Li+) have been implanted at various energies and doses to assess the technique sensitivity to detect changes affecting the compound subgap absorption spectrum, which is characteristic of impurities. The detected changes (either by the appearance of new peaks or by a change in the impurity or defect concentrations) are shown to differ from one ion species to another. The depth profiling capability of the technique in analyzing implanted samples is also discussed. The results obtained here are correlated to existing published data. It is shown that photoacoustic spectrometry can be very useful if used to appraise the complex defect structure of ion‐implanted CuInSe2.