Surface characterization of epitaxial, semiconducting, FeSi2 grown on Si(100)
- 1 July 1991
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 59 (1) , 99-101
- https://doi.org/10.1063/1.105536
Abstract
We have identified the composition and range of thermal stability of FeSi and FeSi2 films grown on Si(100) by solid phase epitaxy and reactive deposition epitaxy. Evidence for the semiconducting character of FeSi2 is obtained from photoemission measurements giving a low density of states at the Fermi level. Si enrichment at the outer surface of the silicides at temperatures much lower than previously thought has been found by depth profiling. Scanning tunneling microscopy reveals a rather inhomogeneous growth with a tendency towards epitaxial growth favored by the presence of surface steps on the Si substrate.Keywords
This publication has 14 references indexed in Scilit:
- The Fe/Si(100) interfaceJournal of Applied Physics, 1991
- Electronic structure of β-Physical Review B, 1990
- Epitaxial films of semiconducting FeSi2 on (001) siliconApplied Physics Letters, 1990
- Adsorbed layer and thin film growth modes monitored by Auger electron spectroscopySurface Science Reports, 1989
- Semiconducting silicide-silicon heterojunction elaboration by solid phase epitaxyApplied Physics Letters, 1989
- Control of epitaxial orientation of Si on CoSi2(111)Applied Physics Letters, 1988
- Optical properties of semiconducting iron disilicide thin filmsJournal of Applied Physics, 1985
- Photoemission studies of intrinsic surface states on Si(100)Journal of Vacuum Science and Technology, 1979
- Photoemission and electronic structure of ironPhysical Review B, 1976
- First phase nucleation in silicon–transition-metal planar interfacesApplied Physics Letters, 1976