Precise Quantized Hall Resistance Measurements in GaAs/AlxGa1-xAs and InxGa1-xAs/InP Heterostructures
- 1 January 1986
- journal article
- Published by IOP Publishing in Metrologia
- Vol. 22 (2) , 103-110
- https://doi.org/10.1088/0026-1394/22/2/005
Abstract
Measurements of the quantized Hall resistance RH (i) (i = 2 or 4) in 7 different heterostructures (six GaAs based, one InP based) are reported. RH (i) is measured in terms of ΩLCIE by means of a resistance-ratio measurement bridge using a cryogenic current comparator. The peak-to-peak scatter of the results is 8.5 × 10-8. An estimation of RH (i = 2) in terms of ΩLCIE is given with a 1 σ (one standard deviation) total uncertainty of 2.2 × 10-8.Keywords
This publication has 15 references indexed in Scilit:
- A Test of the Quantum Hall Effect as a Resistance StandardIEEE Transactions on Instrumentation and Measurement, 1985
- Study of the Quantized Hall Effect as a Resistance Standard at ETLIEEE Transactions on Instrumentation and Measurement, 1985
- A Measurement System for the Determination of h/e2in Terms of the SI Ohm and the Maintained Ohm at the NPLIEEE Transactions on Instrumentation and Measurement, 1985
- Measurement System for Quantum Hall Effect Utilizing a Josephson PotentiometerIEEE Transactions on Instrumentation and Measurement, 1985
- High Precision Measurements of the Quantized Hall Resistance at the PTBIEEE Transactions on Instrumentation and Measurement, 1985
- Application of the Quantum Hall Effect in MetrologyMetrologia, 1985
- Two-Dimensional Magnetotransport in the Extreme Quantum LimitPhysical Review Letters, 1982
- The quantum Hall effect in modulation doped In0.53Ga 0.47As-InP heterojunctionsJournal de Physique Lettres, 1982
- Resistance standard using quantization of the Hall resistance of GaAs-AlxGa1−xAs heterostructuresApplied Physics Letters, 1981
- New Method for High-Accuracy Determination of the Fine-Structure Constant Based on Quantized Hall ResistancePhysical Review Letters, 1980