Hole-dependent diffusion of implanted Mg in GaAs
- 17 June 1991
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 58 (24) , 2800-2802
- https://doi.org/10.1063/1.104740
Abstract
Magnesium implants in GaAs exhibit two types of diffusion during annealing: uphill diffusion in the peak of the implant and concentration-dependent diffusion into the bulk. The uphill diffusion predominates at short times and low temperatures, while the concentration-dependent diffusion is dominant at long times and high temperatures. By studying implants that were annealed at temperatures where no uphill diffusion occurs, diffused profiles could be modeled and an expression for the Mg diffusivity obtained. The activation energy for this process is 1.77 eV. Results from Fermi level experiments show that the diffusivity is hole dependent rather than concentration dependent. The hole-dependent exponent is unity for Mg implanted into semi-insulating substrates, but may change to two at high hole concentrations.Keywords
This publication has 12 references indexed in Scilit:
- Modeling co-implanted silicon and beryllium in gallium arsenideSolid-State Electronics, 1990
- Diffusion of Zn and Mg in AlGaAs/GaAs structures grown by metalorganic vapor-phase epitaxyJournal of Applied Physics, 1990
- Diffusion of implanted beryllium in n- and p-type GaAsApplied Physics Letters, 1989
- SUPREM 3.5-process modeling of GaAs integrated circuit technologyIEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, 1989
- Fast Diffusion in SemiconductorsAnnual Review of Materials Science, 1988
- Anomalous redistribution of beryllium in GaAs grown by molecular beam epitaxyJournal of Applied Physics, 1985
- Be redistribution during growth of GaAs and AlGaAs by molecular beam epitaxyJournal of Applied Physics, 1985
- Anomalous diffusion behavior of Mg in GaAsApplied Physics Letters, 1982
- Annealing studies of Be-doped GaAs grown by molecular beam epitaxyApplied Physics Letters, 1978
- Isoconcentration diffusion of zinc in GaAs at 1000° CJournal of Materials Science, 1972